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Prokopiv, V.V.
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Prokopiv, V.V.
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Prokopiv, V.V.
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Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
by
Prokopiv, V.V.
,
Fochuk, P.M.
,
Gorichok, I.V.
,
Vergak, E.V.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2009)
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2
Енергiї утворення вакансiй у напiвпровiдниках, одержанi напiвемпiричними методами
by
Horichok, I. V.
,
Hurhula, H. Ya.
,
Prokopiv, V. V.
,
Pylyponiuk, M. A.
Published 2019
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3
Термоелектричнi властивостi легованого вiсмутом станум телуриду SnTe:Bi
by
Freik, D. M.
,
Mudryi, S. I.
,
Gorichok, I. V.
,
Prokopiv, V. V.
,
Matkivsky, O. M.
,
Arsenjuk, I. O.
,
Krynytsky, O. S.
,
Bojchyk, V. M.
Published 2019
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Related Subjects
-
defect formation energy
doping
point defects
semiconductors
thermoelectric properties
tin telluride
легування
станум телурид
термоелектричнi властивостi