Investigation of the modulation processes of the base area of the silicon p+p-n+-structure by D. M. Jodgorova, A. V. Karimov, A. A. Karimov

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Modeling of thermal processes ohigh-frequency silicon p-i-n-diode by A. V. Karimov, A. A. Karimov, A. Z. Rakhmatov, K. T. Dadamatova

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Investigation of transient processes in a silicon p+pn+ structure by O. A. Abdulkhaev, G. O. Asanova, F. A. Gijasova, D. M. Jodgorova, A. A. Karimov, A. V. Karimov

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