Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology за авторством A. I. Klimovskaya, Yu. Yu. Kalashnyk, A. T. Voroshchenko, O. S. Oberemok, Yu. M. Pedchenko, P. M. Lytvyn

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Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe за авторством A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn

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Electrical properties of In/p-pbte structures за авторством H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych

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Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes за авторством A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn

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Peculiarities of preparation of CdTe p-n junctions and carrier transport in them за авторством A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk

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Electrical and photoelectrical properties of a-SICN/c-SI heterojunctions за авторством A. V. Sukach, V. V. Tetorkin, V. I. Ivashchenko, O. K. Porada, A. O. Kozak, A. I. Tkachuk, A. T. Voroshchenko

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Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes за авторством V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko

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