Харвестер відкритої науки НАН України

Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology

за авторством A. I. Klimovskaya, Yu. Yu. Kalashnyk, A. T. Voroshchenko, O. S. Oberemok, Yu. M. Pedchenko, P. M. Lytvyn
Опубліковано 2018

Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe

за авторством A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn
Опубліковано 2013

Electrical properties of In/p-pbte structures

за авторством H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych
Опубліковано 2012

Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes

за авторством A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn
Опубліковано 2011

Peculiarities of preparation of CdTe p-n junctions and carrier transport in them

за авторством A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk
Опубліковано 2017

Electrical and photoelectrical properties of a-SICN/c-SI heterojunctions

за авторством A. V. Sukach, V. V. Tetorkin, V. I. Ivashchenko, O. K. Porada, A. O. Kozak, A. I. Tkachuk, A. T. Voroshchenko
Опубліковано 2013

Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes

за авторством V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko
Опубліковано 2018