Харвестер відкритої науки НАН України

Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K

von Abbasov, Sh.M., Agaverdiyeva, Y.T., Kerimova, T.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film

von Abbasov, Sh.M., Nuruyev, I.R., Tagiyev, T.B., Agaverdiyeva, G.T., Kerimova, T.I., Ismayilova, G.T.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

von Abbasov, Sh.M., Aghaverdiyeva, G.T., Ibrahimov, Z.A., Farajova, U.F., Ibrahimova, R.A., Mehdevi, Heyder
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)