Харвестер відкритої науки НАН України

Hydrogen gettering in annealed oxygen-implanted silicon

von Misiuk, A., Barcz, A., Ulyashin, A., Antonova, I.V., Prujszczyk, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)