Харвестер відкритої науки НАН України

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization

von Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Ultra-high field transport in GaN-based heterostructures

von Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)