Dopant depth profile modification during mass Spectrometric analysis of multilayer nanostructures by A. A. Efremov, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, B. M. Romanyuk

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk

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Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer by A. V. Sachenko, V. P. Kostylev, V. G. Litovchenko, V. G. Popov, B. M. Romanyuk, V. V. Chernenko, V. M. Naseka, T. V. Slusar, S. I. Kyrylova, F. F. Komarov

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