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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient von T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk

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Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer von A. V. Sachenko, V. P. Kostylev, V. G. Litovchenko, V. G. Popov, B. M. Romanyuk, V. V. Chernenko, V. M. Naseka, T. V. Slusar, S. I. Kyrylova, F. F. Komarov

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