Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure за авторством I. B. Sapaev, B. Sapaev, D. B. Babajanov

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Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure за авторством I. B. Sapaev

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The injection photo diode on the basis of nSi-nCdS-n+CdS heterostructures за авторством I. B. Sapaev

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Mechanism of photocurrent amplification in injection photodiodes based on a photosensitive polycrystalline CdS film за авторством I. B. Sapaev, Sh. A. Mirsagatov, B. Sapaev, R. R. Kabulov

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Influence of the ultrasonic irradiation on properties of the injection sensor based on pSi-nCdS-n+CdS — structure and surface states density pSi-nCdS — heterojunction за авторством I. B. Sapaev, Sh. A. Mirsagatov

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