Харвестер відкритої науки НАН України

Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment

von Misiuk, A., Barcz, A., Ulyashin, A., Prujszczyk, M., Bak-Misiuk, J., Formanek, P.
Veröffentlicht in Физика и техника высоких давлений (2010)

Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

von Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

von Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.
Veröffentlicht 2009

Pressure-induced structural transformations in Si:V and Si:V, Mn

von Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
Veröffentlicht in Физика и техника высоких давлений (2008)

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)