Харвестер відкритої науки НАН України

Развитие макротурбулентной неустойчивости в монокристалле YBCO

von Волошин, И.Ф., Калинов, А.В., Фишер, Л.М., Ямпольский, В.А., Bobyl, A., Johansen, T.H.
Veröffentlicht in Физика низких температур (2009)

Efficiency a-Si:H solar cell. Detailed theory

von Kryuchenko, Yu.V., Sachenko, A.V., Bobyl, A.V., Kostylyov, V.P., Romanets, P.N., Sokolovskyi, I.O., Shkrebti, A.I., Terukov, E.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах...

von Boltovets, N. S., Ivanov, V. N., Kovtonyuk, V. M., Rayevskaya, N. S., Belyaev, A. E., Bobyl, A. V., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Novitskiy, C. V., Sheremet, V. N.
Veröffentlicht 2010

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

von Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

von Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Ohmic contacts based on Pd to indium phosphide Gunn diodes

von Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

von Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Porous nanostructured InP: technology, properties, application

von Arsentyev, I. N., Bobyl, A.B., Konnikov, S.G., Tarasov, I.S., Ulin, V.P, Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Belyaev, A.E., Konakova, R.V., Kudryk, Ya.Ya., Kamalov, A.B., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V., Red’ko, R.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)