Efficiency a-Si:H solar cell. Detailed theory

за авторством Kryuchenko, Yu.V., Sachenko, A.V., Bobyl, A.V., Kostylyov, V.P., Romanets, P.N., Sokolovskyi, I.O., Shkrebti, A.I., Terukov, E.I.
Опубліковано 2012

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

за авторством Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.
Опубліковано 2005

Ohmic contacts based on Pd to indium phosphide Gunn diodes

за авторством Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Опубліковано 2015

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

за авторством Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Опубліковано 2005