Харвестер відкритої науки НАН України

Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration

за авторством Bogoboyashchyy, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals

за авторством Elizarov, A.I., Kurbanov, K.R., Bogoboyashchyy, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe

за авторством Izhnin, I.I., Bogoboyashchyy, V.V., Kurbanov, K.R., Mynbaev, K.D., Ryabikov, V.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)