Search Results - Bogoboyashchyy, V.V.
- Showing 1 - 3 results of 3
-
1
-
2
-
3
Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe by Izhnin, I.I., Bogoboyashchyy, V.V., Kurbanov, K.R., Mynbaev, K.D., Ryabikov, V.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)Get full text
Article