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Bogoboyashchyy, V.V.
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Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration
by
Bogoboyashchyy, V.V.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2001)
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2
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals
by
Elizarov, A.I.
,
Kurbanov, K.R.
,
Bogoboyashchyy, V.V.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2003)
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3
Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe
by
Izhnin, I.I.
,
Bogoboyashchyy, V.V.
,
Kurbanov, K.R.
,
Mynbaev, K.D.
,
Ryabikov, V.M.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2005)
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