Харвестер відкритої науки НАН України

Electro-physical properties of γ-exposed crystals of silicon and germanium

von Dotsenko, Yu. P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

von Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

von Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)