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Fedorovich, О.А.
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Fedorovich, О.А.
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Fedorovich, О.А.
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Empirical formula for the dependence of the “optical gap” value on the electron concentration Ne within the range of 10¹⁷cm⁻³ ≤Ne ≤ 10²²cm⁻³
by
Fedorovich, О.А.
Published in
Вопросы атомной науки и техники
(2013)
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2
On the dense plasma decay within the electron concentration range of 10¹⁷ cm⁻³≤Ne≤10²² cm⁻³
by
Fedorovich, О.А.
,
Voitenko, L.M.
Published in
Вопросы атомной науки и техники
(2013)
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3
The bias voltage and its influence on the etching rate of silicon
by
Fedorovich, О.А.
,
Hladkovskiy, V.V.
,
Polozov, B.P.
,
Kruglenko, М.P.
Published in
Вопросы атомной науки и техники
(2015)
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Формирование мезаструктур 4НSiC p–i–n-диодов методом ионно-плазменного травления
by
Boltovets, M. S.
,
Borisenko, A. G.
,
Ivanov, V. N.
,
Fedorovich, О. А.
,
Krivutsa, V. A.
,
Polozov, B. P.
Published 2009
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Related Subjects
Плазменно-пучковый разряд, газовый разряд и плазмохимия
4NSiC silicon carbide
diode chip
ion-plasma etching
mesastructure
p–i–n-diode
p–i–n-диод
silicon etching
Экспериментальные методы и обработка данных
карбид кремния 4НSiC
мезаструктура
травление ионно-плазменное
травление кремния
чип диода