Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination von Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide von A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov

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