Nanointegration and self-assembling in nanoelectronics (review) von G. S. Svechnikov, A. N. Morozovskaja

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New method for estimating the refractive index of optical materials in spectrally selective elements von A. A. Manko, G. S. Svechnikov

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An intrinsic physical content of "single photon power" - (hv*dv) von E. A. Salkov, G. S. Svechnikov

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Peculiarities of phase transformations of SiC crystals and thin films with in-grown original defects von S. I. Vlaskina, G. N. Mishinova, V. E. Rodionov, G. S. Svechnikov

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Preparation and characterization of AI-VIIIVVI semiconductor films and the functional structures based on them: features and capabilities of the CVD method using dithiocarbamates von L. V. Zavjalova, G. S. Svechnikov, N. N. Roshchina, B. A. Snopok

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Nanograin boundaries and silicon carbide photoluminescence von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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Nanocrystalline silicon carbide films for solar cells von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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Nanostructures in lightly doped silicon carbide crystals with polytypic defects von S. I. Vlaskina, G. N. Mishinova, L. V. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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3C-6H transformation in heated cubic silicon carbide 3C-SiC von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov

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Silicon carbide phase transition in as-grown 3C-6H polytypes junction von S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, G. S. Svechnikov, V. E. Rodionov, S. W. Lee

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Investigation of luminescent properties inherent to SrTiO3:Pr3+ luminophor with Al impurity von O. M. Marchylo, L. V. Zavyalova, Y. Nakanishi, H. Kominami, A. E. Belyaev, G. S. Svechnikov

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Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface von N. P. Tatyanenko, N. N. Roshchina, V. L. Gromashevskii, G. S. Svechnikov, L. V. Zavyalova, B. A. Snopok

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Silicon carbide defects and luminescence centers in current heated 6H-SiC von S. W. Lee, S. I. Vlaskina, V. I. Vlaskin, I. V. Zaharchenko, V. A. Gubanov, G. N. Mishinova, G. S. Svechnikov, V. E. Rodionov, S. A. Podlasov

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