Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes за авторством Katrunov, K.A., Galchinetskii, L.P., Grinyov, B.V., Starzhinskiy, N.G., Bendeberya, G.N., Bondarenko, E.A.

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Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties за авторством Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.

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