Харвестер відкритої науки НАН України

Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes

von Katrunov, K.A., Galchinetskii, L.P., Grinyov, B.V., Starzhinskiy, N.G., Bendeberya, G.N., Bondarenko, E.A.
Veröffentlicht in Functional Materials (2008)

Small-grained detector of ionizing radiation based on ZnSe(Te)

von Volkov, V.G., Gavrilyuk, V.P., Galchinetskii, L.P., Grinyov, B.V., Katrunov, K.A., Ryzhikov, V.D.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

von Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)