Харвестер відкритої науки НАН України

Current transport mechanisms in metal – high-k dielectric – silicon structures

von Gomeniuk, Y.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Effect of the charge state of traps on the transport current in the SiC/Si heterostructure

von Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

von Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Properties of SiGe/Si heterostructures fabricated by ion implantation technique

von Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

von Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)