Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements by Gomeniuk, Yu.V.

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Electroluminescent properties of Tb-doped carbon-enriched silicon oxide by Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.

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