Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors by Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.

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Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K by Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.

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Кремнієві р-МОН та n-МОН транзистори з одновісно деформованими каналами у нанотехнології електронних приладів... by Gorin, A.E., Gromova, G.V., Ermakov, V.M., Kogoutyuk, P.P., Kolomoets, V.V., Nasarchuk, P.F., Panasjuk, L.I., Fedosov, S.A.

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals by Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

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Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon by Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.

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Петро Іванович Баранський (до 90-рiччя вiд дня народження) by Belyaev, O. Ye., Valakh, M. Ya., Venger, Ye. F., Klad’ko, V. P., Kochelap, V. O., Litovchenko, V. G., Lysenko, V. S., Syzov, F. F., Babych, V. M., Dmytruk, M. L., Kolomoets, V. V., Konakova, R. V., Korbutyak, D. V., Melnyk, V. P., Prokopenko, I. V., Romanyuk, B. M., Tomashyk, V. M., Vorobkalo, F. M.

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