Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors за авторством Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.

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Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K за авторством Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals за авторством Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

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Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon за авторством Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.

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