Харвестер відкритої науки НАН України

Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it

von Kolyadina, E.Yu., Matveeva, L.A., Neluba, P.L., Venger, E.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

von Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

von Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures

von Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

von Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)