Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it by Kolyadina, E.Yu., Matveeva, L.A., Neluba, P.L., Venger, E.F.

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Quantum-size effects in semiconductor heterosystems by Matveeva, L.A., Venger, E.F., Kolyadina, E.Yu., Neluba, P.L.

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The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment by Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

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Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures by Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.

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Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system by Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.

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