Харвестер відкритої науки НАН України

Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it

за авторством Kolyadina, E.Yu., Matveeva, L.A., Neluba, P.L., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

за авторством Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

за авторством Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures

за авторством Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

за авторством Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)