Model of the grain boundary in p-n-structures based on polycrystalline semiconductors von L. O. Olimov

Volltext

Microstructure of intergranular boundaries in polycrystalline silicon and its effect on the transport of charge carriers von B. M. Abdurakhmanov, L. O. Olimov, F. Abdurazakov

Volltext

Electrical properties intergranular boundaries in the volume of polycrystalline silicon von L. O. Olimov, M. Mujdinova, F. L. Omonboev

Volltext

Switching of current and voltage when heating non-transition polycrystalline silicon doped with alkali metals in the region of grain boundaries von L. O. Olimov, B. M. Abdurakhmanov, F. L. Omonboev

Volltext