The ordering effects of an n-Si defect structure, induced by high fluences of ions with MeV energies von H. P. Haidar, M. B. Pinkovska, M. I. Starchyk

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Voids' layer structures in silicon irradiated with high doses of high-energy helium ions von M. I. Starchyk, L. S. Marchenko, M. B. Pinkovska, G. G. Shmatko, V. I. Varnina

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Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs von T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, M. B. Pinkovska, D. P. Stratilat, V. P. Tartachnyk

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Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents von V. H. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons von O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Low doses effect in GaP light-emitting diodes von O. M. Hontaruk, O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, O. I. Radkevych, V. P. Tartachnyk

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Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity von O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions von O. M. Hontaruk, O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons von O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Surface distribution of the emitting intensity of GaP light-emitting diodes von O. V. Konoreva, P. H. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes von O. I. Vlasenko, V. P. Veleshchuk, Z. K. Vlasenko, M. P. Kyseliuk, P. H. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska

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