The ordering effects of an n-Si defect structure, induced by high fluences of ions with MeV energies

за авторством H. P. Haidar, M. B. Pinkovska, M. I. Starchyk
Опубліковано 2021

Voids' layer structures in silicon irradiated with high doses of high-energy helium ions

за авторством M. I. Starchyk, L. S. Marchenko, M. B. Pinkovska, G. G. Shmatko, V. I. Varnina
Опубліковано 2015

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

за авторством V. H. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Опубліковано 2015

Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons

за авторством O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Опубліковано 2014

Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity

за авторством O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Опубліковано 2016

Low doses effect in GaP light-emitting diodes

за авторством O. M. Hontaruk, O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, O. I. Radkevych, V. P. Tartachnyk
Опубліковано 2016

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

за авторством O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Опубліковано 2015

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

за авторством O. M. Hontaruk, O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Опубліковано 2015

Surface distribution of the emitting intensity of GaP light-emitting diodes

за авторством O. V. Konoreva, P. H. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Опубліковано 2013

Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes

за авторством O. I. Vlasenko, V. P. Veleshchuk, Z. K. Vlasenko, M. P. Kyseliuk, P. H. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska
Опубліковано 2015