Antisymmetric contribution to the magnetoresistance of heterostructure in the in-plane magnetic field за авторством A. S. Bogoljubskij, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, M. V. Jakunin

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Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells за авторством Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells за авторством S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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On the question of critical exponents universality in the quantum Hall effect regime за авторством Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin

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Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures за авторством A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination за авторством Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, A. P. Savelev, M. V. Jakunin

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Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination за авторством Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime за авторством Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide за авторством A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov

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