Antisymmetric contribution to the magnetoresistance of heterostructure in the in-plane magnetic field by A. S. Bogoljubskij, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, M. V. Jakunin

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Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells by Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells by S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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On the question of critical exponents universality in the quantum Hall effect regime by Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin

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Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures by A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination by Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, A. P. Savelev, M. V. Jakunin

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Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination by Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime by Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide by A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov

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