Харвестер відкритої науки НАН України

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs

за авторством Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures

за авторством Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well

за авторством Souaf, M., Baira, M., Maaref, H., Ilahi, B.
Опубліковано в: Condensed Matter Physics (2015)