New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

за авторством Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.
Опубліковано 2005

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

за авторством Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Опубліковано 2005

Porous nanostructured InP: technology, properties, application

за авторством Arsentyev, I. N., Bobyl, A.B., Konnikov, S.G., Tarasov, I.S., Ulin, V.P, Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Belyaev, A.E., Konakova, R.V., Kudryk, Ya.Ya., Kamalov, A.B., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V., Red’ko, R.A.
Опубліковано 2005