Харвестер відкритої науки НАН України

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

von Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

von Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Porous nanostructured InP: technology, properties, application

von Arsentyev, I. N., Bobyl, A.B., Konnikov, S.G., Tarasov, I.S., Ulin, V.P, Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Belyaev, A.E., Konakova, R.V., Kudryk, Ya.Ya., Kamalov, A.B., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V., Red’ko, R.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)