Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment

за авторством Misiuk, A., Ch. Lee
Опубліковано 2008

Pressure-induced transformations during annealing of silicon implanted with oxygen

за авторством Misiuk, A., Efros, B.M.
Опубліковано 2006

Hydrogen gettering in annealed oxygen-implanted silicon

за авторством Misiuk, A., Barcz, A., Ulyashin, A., Antonova, I.V., Prujszczyk, M.
Опубліковано 2010

Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment

за авторством Misiuk, A., Barcz, A., Ulyashin, A., Prujszczyk, M., Bak-Misiuk, J., Formanek, P.
Опубліковано 2010

Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

за авторством Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.
Опубліковано 2005

Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

за авторством Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.
Опубліковано 2009

Pressure-induced structural transformations in Si:V and Si:V, Mn

за авторством Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
Опубліковано 2008

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

за авторством Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Опубліковано 1999