Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment за авторством Misiuk, A., Ch. Lee

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Pressure-induced transformations during annealing of silicon implanted with oxygen за авторством Misiuk, A., Efros, B.M.

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Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure за авторством Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.

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Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure за авторством Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.

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Pressure-induced structural transformations in Si:V and Si:V, Mn за авторством Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing за авторством Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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