Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment by Misiuk, A., Ch. Lee

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Pressure-induced transformations during annealing of silicon implanted with oxygen by Misiuk, A., Efros, B.M.

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Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure by Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.

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Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure by Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.

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Pressure-induced structural transformations in Si:V and Si:V, Mn by Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing by Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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