Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment von Misiuk, A., Ch. Lee

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Pressure-induced transformations during annealing of silicon implanted with oxygen von Misiuk, A., Efros, B.M.

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Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure von Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.

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Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure von Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.

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Pressure-induced structural transformations in Si:V and Si:V, Mn von Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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