Open Science Harvester of NAS of Ukraine

Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment

by Misiuk, A., Ch. Lee
Published in Functional Materials (2008)

Pressure-induced transformations during annealing of silicon implanted with oxygen

by Misiuk, A., Efros, B.M.
Published in Физика и техника высоких давлений (2006)

Hydrogen gettering in annealed oxygen-implanted silicon

by Misiuk, A., Barcz, A., Ulyashin, A., Antonova, I.V., Prujszczyk, M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment

by Misiuk, A., Barcz, A., Ulyashin, A., Prujszczyk, M., Bak-Misiuk, J., Formanek, P.
Published in Физика и техника высоких давлений (2010)

Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

by Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

by Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.
Published 2009

Pressure-induced structural transformations in Si:V and Si:V, Mn

by Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
Published in Физика и техника высоких давлений (2008)

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

by Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)