Харвестер відкритої науки НАН України

Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals

von Motsnyi, F.V., Dorogan, V.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of Mn and Cr impurities on quasi-surface exciton states of BiI₃ layered single crystals

von Dorogan, V.G., Zhydkov, V.O., Motsnyi, F.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Study of supercapacitors with a double electrical layer based on activated carbon materials

von Budzulyak, I.M., Kovalyuk, Z.D., Motsnyi, F.V., Orletskyi, V.B.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface

von Dorogan, V.G., Zhydkov, V.O., Motsnyi, F.V., Smolanka, O.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Phase transition in Cs₃Bi₂I₉ ferroelastic: investigation by Raman scattering technique

von Motsnyi, F.V., Vuychik, M.V., Smolanka, O.M., Peresh, E.Yu.
Veröffentlicht in Functional Materials (2005)

Saddle point excitonic resonances in BiI3 layered single crystals

von Kudryavtsev, O.O., Lisitsa, M.P., Motsnyi, F.V., Virko, S.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals

von Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.
Veröffentlicht in Физика низких температур (2004)