Харвестер відкритої науки НАН України

Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals

за авторством Motsnyi, F.V., Dorogan, V.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of Mn and Cr impurities on quasi-surface exciton states of BiI₃ layered single crystals

за авторством Dorogan, V.G., Zhydkov, V.O., Motsnyi, F.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Study of supercapacitors with a double electrical layer based on activated carbon materials

за авторством Budzulyak, I.M., Kovalyuk, Z.D., Motsnyi, F.V., Orletskyi, V.B.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface

за авторством Dorogan, V.G., Zhydkov, V.O., Motsnyi, F.V., Smolanka, O.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Phase transition in Cs₃Bi₂I₉ ferroelastic: investigation by Raman scattering technique

за авторством Motsnyi, F.V., Vuychik, M.V., Smolanka, O.M., Peresh, E.Yu.
Опубліковано в: Functional Materials (2005)

Saddle point excitonic resonances in BiI3 layered single crystals

за авторством Kudryavtsev, O.O., Lisitsa, M.P., Motsnyi, F.V., Virko, S.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals

за авторством Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.
Опубліковано в: Физика низких температур (2004)