Scaling laws under quantum Hall effect for a smooth disorder potential von S. V. Gudina, A. S. Klepikova, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin

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Anisotropic temperature dependence of normal state resistivity in underdoped region of a layered electron-doped superconductor Nd2–xCexCuO4 von A. S. Klepikova, T. B. Charikova, N. G. Shelushinina, M. R. Popov, A. A. Ivanov

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On the question of critical exponents universality in the quantum Hall effect regime von Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin

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The estimation of coherence length for electron-doped superconductor Nd2–xCexCuO4+δ von T. B. Charikova, G. I. Harus, N. G. Shelushinina, O. E. Sochinskaya, A. A. Ivanov

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The mixed-state Hall conductivity of single-crystal films Nd2–xCexCuO4+δ (x = 0.14) von N. G. Shelushinina, G. I. Harus, T. B. Charikova, D. S. Petukhov, O. E. Petukhova, A. A. Ivanov

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Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide HgTe quantum well: "extremum loop” model and effects of cubic symmetry von S. V. Gudina, A. S. Bogolubskiy, V. N. Neverov, K. V. Turutkin, N. G. Shelushinina, M. V. Yakunin

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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures von A. P. Savelyev, Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin

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Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination von Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary von T. B. Charikova, N. G. Shelushinina, G. I. Harus, V. N. Neverov, D. S. Petukhov, O. E. Petukhova, A. A. Ivanov

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Anomalous behavior of the Hall effect in electron-doped superconductor Nd2–xCexCuO4+δ with nonstoichiometric disorder von T. B. Charikova, N. G. Shelushinina, G. I. Harus, V. N. Neverov, D. S. Petukhov, O. E. Sochinskaya, A. A. Ivanov

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Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide von A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov

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HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential von S. V. Gudina, Yu. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. R. Popov, E. V. Deriushkina, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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Activation transport under quantum Hall regime in HgTe-based heterostructure von S. V. Gudina, V. N. Neverov, E. G. Novik, E. V. Ilchenko, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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