Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films за авторством V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Holoborodko

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Optical and electrophysical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructure за авторством V. A. Vynychenko, V. V. Buchenko, N. S. Holoborodko, V. V. Lendel, Ye. Lushkin, V. M. Teleha

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