nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals by Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh

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X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates by N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk

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Preparation and study of the porous Si surfaces obtained by electrochemical method by V. G. Lytovchenko, T. I. Gorbanyuk, V. P. Kladko, A. V. Sarikov, N. V. Safriuk, L. L. Fedorenko, S. Asmontas, J. Gradauskas, E. Sirmulis, O. Zalys

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios by V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich

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