nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals

за авторством Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh
Опубліковано 2017

X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

за авторством N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin
Опубліковано 2013

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient

за авторством T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk
Опубліковано 2017

Preparation and study of the porous Si surfaces obtained by electrochemical method

за авторством V. G. Lytovchenko, T. I. Gorbanyuk, V. P. Kladko, A. V. Sarikov, N. V. Safriuk, L. L. Fedorenko, S. Asmontas, J. Gradauskas, E. Sirmulis, O. Zalys
Опубліковано 2017

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

за авторством V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich
Опубліковано 2014