Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer von Nadtochiy, V., Golodenko, N., Nechvolod, N.

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Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity von Moskal, D., Nadtochiy, V., Golodenko, N.

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Microplasticity of subsurface layers of diamond-like semiconductors under microindentation von Nadtochiy, V.A., Alyokhin, V.P., Golodenko, M.M.

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