Харвестер відкритої науки НАН України

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

von Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

von Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

von Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)