Memory phenomenon in two-barrier n++pnn+-structures за авторством A. V. Karimov, D. M. Jodgorova, O. A. Abdulkhaev

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Highly sensitive photodetector based on ge double-barrier punch-through structure за авторством O. A. Abdulkhaev, D. M. Jodgorova, A. V. Karimov, Sh. M. Kuliev

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Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure за авторством O. A. Abdulkhaev, D. M. Jodgorova, A. V. Karimov, A. A. Jakubov, Sh. M. Kuliev

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Phototransistor composite on field effect transistors за авторством A. V. Karimov, D. M. Jodgorova, O. A. Abdulkhaev, B. M. Kamanov, F. A. Gijasova

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Functional characteristics of the field-effect transistor with control pn-junction with different switching modes за авторством O. A. Abdulkhaev, F. A. Gijasova, D. M. Jodgorova, B. M. Kamanov, A. V. Karimov

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Investigation of the effect of potential barriers on mechanisms current transfer in meetings of two-barrier silicon structures за авторством O. A. Abdulkhaev, G. O. Asanova, D. M. Jodgorova, E. N. Jakubov, A. V. Karimov

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Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment за авторством A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev, Kh. Aripova, Ju. Khidirnazarova, Sh. M. Kuliev

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Investigation of the saturation effect of the drain current of a field-effect transistor with series-connected channels за авторством A. V. Karimov, D. M. Jodgorova, O. A. Abdulkhaev, E. N. Jakubov, Sh. Sh. Juldashev, A. A. Turaev

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Investigation of transient processes in a silicon p+pn+ structure за авторством O. A. Abdulkhaev, G. O. Asanova, F. A. Gijasova, D. M. Jodgorova, A. A. Karimov, A. V. Karimov

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Study on the formation of current characteristics of a silicon photodiode with rectifying barriers за авторством A. V. Karimov, D. M. Jodgorova, F. A. Gijasova, M. A. Mirdzhalilova, G. O. Asanova, O. A. Abdulkhaev, Zh. F. Mukhutdinov

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