Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology von A. I. Klimovskaya, Yu. Yu. Kalashnyk, A. T. Voroshchenko, O. S. Oberemok, Yu. M. Pedchenko, P. M. Lytvyn

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Dopant depth profile modification during mass Spectrometric analysis of multilayer nanostructures von A. A. Efremov, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, B. M. Romanyuk

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Dopant depth profile modification during mass Spectrometric analysis of multilayer nanostructures von O. O. Yefremov, V. H. Lytovchenko, V. P. Melnyk, O. S. Oberemok, V. H. Popov, B. M. Romaniuk

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Investigation of photodiode formation processes in insb by using beryllium ion implantation von Yu. V. Holtvianskyi, O. Y. Hudymenko, O. V. Dubikovskyi, O. I. Liubchenko, O. S. Oberemok, T. M. Sabov, S. V. Sapon, K. I. Chunikhina

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Formation of silicon nanoclusters in buried ultra-thin oxide layers von O. S. Oberemok, V. G. Litovchenko, D. V. Gamov, V. G. Popov, V. P. Melnik, Yo. Gudymenko, V. A. Nikirin, I. M. Khatsevich

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Light-induced transport in amorphous chalcogenides/gold nanoparticles composites von M. L. Trunov, P. M. Lytvyn, P. M. Nagy, O. S. Oberemok, M. O. Durcot, A. A. Tarnai, I. V. Prokopenko, V. M. Rubish

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient von T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk

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Research of recombination characteristics of Cz-Si implanted with iron ions von D. V. Gamov, O. I. Gudymenko, V. P. Kladko, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, Yu. O. Polishchuk, B. M. Romaniuk, V. V. Chernenko, V. M. Naseka

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Research of recombination characteristics of Cz-Si implanted with iron ions von D. V. Hamov, O. I. Hudymenko, V. P. Kladko, V. H. Lytovchenko, V. P. Melnyk, O. S. Oberemok, V. H. Popov, Yu. O. Polishchuk, B. M. Romaniuk, V. V. Chernenko, V. M. Nasieka

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