Peculiarities of the microstructure and properties of iron aluminide powders obtained by the method of plasma-arc spheroidization by L. I. Adeeva, A. Y. Tunik, V. M. Korzhyk, D. V. Strohonov, V. A. Kostin, O. V. Konoreva

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Electrophysical characteristics of initial and irradiated GaAsP LEDs structures by O. V. Konoreva, P. H. Lytovchenko, O. I. Radkevych, V. M. Popov, V. P. Tartachnyk, V. V. Shlapatska

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Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents by V. H. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons by O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Low doses effect in GaP light-emitting diodes by O. M. Hontaruk, O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, O. I. Radkevych, V. P. Tartachnyk

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Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity by O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions by O. M. Hontaruk, O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons by O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Influence of radiation on the electrophysical parameters of GaAsP LEDs by R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, P. H. Lytovchenko, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko

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Spectral characteristics of initial and irradiated GaAsP LEDs by R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko, V. V. Shlapatska

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Surface distribution of the emitting intensity of GaP light-emitting diodes by O. V. Konoreva, P. H. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons by R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk

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