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O. V. Kozynets
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Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts
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O. V. Kozynets
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S. V. Litvinenko
Published 2012
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2
Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts
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O. V. Kozynets
,
S. V. Lytvynenko
Published 2012
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3
Theoretical analysis of the efficiency of silicon solar cells with amorphized layers in the space charge region
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O. V. Kozynets
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V. A. Skryshevskyi
Published 2015
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4
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
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O. V. Kozynets
,
C. V. Lytvynenk
,
V. A. Skryshevskyi
Published 2017
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