Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts von O. V. Kozynets, S. V. Litvinenko

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Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts von O. V. Kozynets, S. V. Lytvynenko

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Theoretical analysis of the efficiency of silicon solar cells with amorphized layers in the space charge region von O. V. Kozynets, V. A. Skryshevskyi

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Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction von O. V. Kozynets, C. V. Lytvynenk, V. A. Skryshevskyi

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