Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts

за авторством O. V. Kozynets, S. V. Lytvynenko
Опубліковано 2012

Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts

за авторством O. V. Kozynets, S. V. Litvinenko
Опубліковано 2012

Theoretical analysis of the efficiency of silicon solar cells with amorphized layers in the space charge region

за авторством O. V. Kozynets, V. A. Skryshevskyi
Опубліковано 2015

Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

за авторством O. V. Kozynets, C. V. Lytvynenk, V. A. Skryshevskyi
Опубліковано 2017