Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts

von O. V. Kozynets, S. V. Lytvynenko
Veröffentlicht 2012

Physical properties of sensor structures on the basis of silicon p−n junction with interdigitated back contacts

von O. V. Kozynets, S. V. Litvinenko
Veröffentlicht 2012

Theoretical analysis of the efficiency of silicon solar cells with amorphized layers in the space charge region

von O. V. Kozynets, V. A. Skryshevskyi
Veröffentlicht 2015

Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

von O. V. Kozynets, C. V. Lytvynenk, V. A. Skryshevskyi
Veröffentlicht 2017