Open Science Harvester of NAS of Ukraine

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

by Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Peculiarities of optical absorption near-edge in irradiated GaP:Te

by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Published in Functional Materials (2010)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Radiation influence on characteristics of GaP light emitting diodes

by Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Published in Functional Materials (2009)

Radiative recombination in initial and electron-irradiated GaP crystals

by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

by Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Published in Functional Materials (2005)

Ultrasound influence on exciton emission of GaP light diodes

by Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

by Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)