Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures за авторством Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.

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Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.

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Effect of the charge state of traps on the transport current in the SiC/Si heterostructure за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.

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Properties of SiGe/Si heterostructures fabricated by ion implantation technique за авторством Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.

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Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions за авторством Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.

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Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions за авторством Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.

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Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment за авторством Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.

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