Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band von S. V. Luniov, O. V. Burban, P. F. Nazarchuk

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Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band von S. V. Lunov, O. V. Burban, P. F. Nazarchuk

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Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons von S. V. Lunov, A. I. Zimych, P. F. Nazarchuk, V. T. Masliuk, I. H. Mehela

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Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K von V. M. Ermakov, V. V. Kolomoets, L. I. Panasyuk, P. F. Nazarchuk, L. V. Yashchynskyi

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Determination of the activation energy of A-center in the uniaxially deformed n-Ge single crystals von S. V. Lunov, A. I. Zimych, P. F. Nazarchuk, S. A. Moroz, L. M. Polishchuk, V. T. Masliuk, I. H. Mehela

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