Electrophysical characteristics of initial and irradiated GaAsP LEDs structures von O. V. Konoreva, P. H. Lytovchenko, O. I. Radkevych, V. M. Popov, V. P. Tartachnyk, V. V. Shlapatska

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Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs von T. I. Mosiuk, R. M. Vernydub, P. H. Lytovchenko, Yu. B. Myroshnichenko, D. P. Stratilat, V. P. Tartachnyk, V. V. Shlapatska

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Degradation and recovery features of irradiated GAP LEDs von O. P. Budnyk, R. M. Vernydub, O. I. Kyrylenko, P. H. Lytovchenko, O. I. Radkevych, D. P. Stratilat, V. P. Tartachnyk

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Influence of radiation on the electrophysical parameters of GaAsP LEDs von R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, P. H. Lytovchenko, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko

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Surface distribution of the emitting intensity of GaP light-emitting diodes von O. V. Konoreva, P. H. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes von O. I. Vlasenko, V. P. Veleshchuk, Z. K. Vlasenko, M. P. Kyseliuk, P. H. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska

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