Харвестер відкритої науки НАН України

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

von G. P. Gaidar, P. I. Baranskii
Veröffentlicht 2017

Concentration dependences of the anisotropy parameter of mobility K = μ⊥/μ || and the anisotropy parameter of electron-phonon drag thermopower M = α || ph/α⊥ ph IN n-Ge and n-Si...

von G. P. Gaidar, P. I. Baranskii
Veröffentlicht 2014

Anisotropy of thermoelectric properties of multi-valley semiconductors of cubic symmetry under the influence of external directional effects

von P. I. Baranskii, G. P. Haidar
Veröffentlicht 2014

Some peculiarities of thermopower anisotropy in undeformed and elastically deformed n – Si and n – Ge single crystals

von G. P. Gaidar, P. I. Baranskii
Veröffentlicht 2015

Features of tensoresistance in single crystals of germanium and silicon with different dopants

von P. I. Baranskii, G. P. Gaidar
Veröffentlicht 2016

Effect of thermal treatment on drag Seebeck coefficient anisotropy parameter of transmutation-doped silicon crystal

von G. P. Gaidar, P. I. Baranskii
Veröffentlicht 2016

Anisotropic scattering theory and relevant problems of the kinetics of electron processes in many-valley semiconductors

von P. I. Baranskii, G. P. Haidar
Veröffentlicht 2013

Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

von P. I. Baranskii, G. P. Gaidar
Veröffentlicht 2012

Some thermoelectric features of conventional and transmutation doped silicon crystals

von P. I. Baranskii, G. P. Haidar
Veröffentlicht 2012

Anisotropy of electron phonon drag thermoEMF in n-Ge

von P. I. Baranskii, G. P. Gaidar
Veröffentlicht 2012