Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals von G. P. Gaidar, P. I. Baranskii

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Features of tensoresistance in single crystals of germanium and silicon with different dopants von P. I. Baranskii, G. P. Gaidar

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Effect of thermal treatment on drag Seebeck coefficient anisotropy parameter of transmutation-doped silicon crystal von G. P. Gaidar, P. I. Baranskii

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Some peculiarities of thermopower anisotropy in undeformed and elastically deformed n – Si and n – Ge single crystals von G. P. Gaidar, P. I. Baranskii

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Anisotropy of thermoelectric properties of multi-valley semiconductors of cubic symmetry under the influence of external directional effects von P. I. Baranskii, G. P. Haidar

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Concentration dependences of the anisotropy parameter of mobility K = μ⊥/μ || and the anisotropy parameter of electron-phonon drag thermopower M = α || ph/α⊥ ph IN n-Ge and n-Si... von G. P. Gaidar, P. I. Baranskii

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Anisotropic scattering theory and relevant problems of the kinetics of electron processes in many-valley semiconductors von P. I. Baranskii, G. P. Haidar

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Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity von P. I. Baranskii, G. P. Gaidar

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Some thermoelectric features of conventional and transmutation doped silicon crystals von P. I. Baranskii, G. P. Haidar

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Anisotropy of electron phonon drag thermoEMF in n-Ge von P. I. Baranskii, G. P. Gaidar

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